Infineon OptiMOS 5 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin TO-263

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Subtotal (1 reel of 1000 units)*

R 32 404,00

(exc. VAT)

R 37 265,00

(inc. VAT)

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  • Shipping from 29 May 2026
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Units
Per unit
Per Reel*
1000 - 1000R 32.404R 32,404.00
2000 - 2000R 31.594R 31,594.00
3000 +R 30.646R 30,646.00

*price indicative

RS stock no.:
214-9008
Mfr. Part No.:
IPB024N10N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

OptiMOS 5

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

2.4mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

100% avalanche tested

Qualified according to JEDEC for target applications

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