Infineon OptiMOS 5 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin TO-263
- RS stock no.:
- 214-9008
- Mfr. Part No.:
- IPB024N10N5ATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 reel of 1000 units)*
R 30 978,00
(exc. VAT)
R 35 625,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 25 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | R 30.978 | R 30,978.00 |
| 2000 - 2000 | R 30.203 | R 30,203.00 |
| 3000 + | R 29.297 | R 29,297.00 |
*price indicative
- RS stock no.:
- 214-9008
- Mfr. Part No.:
- IPB024N10N5ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.
100% avalanche tested
Qualified according to JEDEC for target applications
Related links
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263 IPB024N10N5ATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263 IPB010N06NATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET & Diode 40 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 5 Type N-Channel MOSFET & Diode 40 V Enhancement, 7-Pin TO-263 IPB011N04LGATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET & Diode 150 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 5 Type N-Channel MOSFET & Diode 100 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 5 Type N-Channel MOSFET 150 V N, 7-Pin TO-263