DiodesZetex Dual DMC3060 2 Type P, Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 6-Pin TSOT DMC3060LVT-7
- RS stock no.:
- 206-0061
- Mfr. Part No.:
- DMC3060LVT-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 25 units)*
R 131,20
(exc. VAT)
R 150,875
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,050 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 5.248 | R 131.20 |
| 50 - 75 | R 5.117 | R 127.93 |
| 100 - 225 | R 4.963 | R 124.08 |
| 250 - 975 | R 4.765 | R 119.13 |
| 1000 + | R 4.574 | R 114.35 |
*price indicative
- RS stock no.:
- 206-0061
- Mfr. Part No.:
- DMC3060LVT-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMC3060 | |
| Package Type | TSOT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.16W | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Height | 0.9mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMC3060 | ||
Package Type TSOT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.16W | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Height 0.9mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex 30V complementary pair enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 12 V with 0.83W thermal power dissipation.
Low input capacitance
Fast switching speed
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