DiodesZetex Dual DMP3164 2 Type P-Channel MOSFET, 2.8 A, 30 V Enhancement, 6-Pin TSOT DMP3164LVT-7
- RS stock no.:
- 206-0118
- Mfr. Part No.:
- DMP3164LVT-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 187,60
(exc. VAT)
R 215,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 425 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 7.504 | R 187.60 |
| 50 - 75 | R 7.316 | R 182.90 |
| 100 - 225 | R 7.096 | R 177.40 |
| 250 - 975 | R 6.812 | R 170.30 |
| 1000 + | R 6.54 | R 163.50 |
*price indicative
- RS stock no.:
- 206-0118
- Mfr. Part No.:
- DMP3164LVT-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMP3164 | |
| Package Type | TSOT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.3Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.8V | |
| Typical Gate Charge Qg @ Vgs | 4.4nC | |
| Maximum Power Dissipation Pd | 1.16W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | MIL-STD-202, J-STD-020, UL 94V-0, AEC-Q101, RoHS | |
| Length | 2.9mm | |
| Width | 2.8 mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMP3164 | ||
Package Type TSOT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.3Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.8V | ||
Typical Gate Charge Qg @ Vgs 4.4nC | ||
Maximum Power Dissipation Pd 1.16W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals MIL-STD-202, J-STD-020, UL 94V-0, AEC-Q101, RoHS | ||
Length 2.9mm | ||
Width 2.8 mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex 30V dual P- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 12V with 0.83 W thermal power dissipation.
Low on-resistance
Low input capacitance
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