DiodesZetex Dual 2 Type N, Type P-Channel MOSFET, 4 A, 20 V Enhancement, 6-Pin TSOT DMC2057UVT-7
- RS stock no.:
- 182-7055
- Mfr. Part No.:
- DMC2057UVT-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 100 units)*
R 304,60
(exc. VAT)
R 350,30
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 2,700 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | R 3.046 | R 304.60 |
| 200 - 400 | R 2.97 | R 297.00 |
| 500 - 900 | R 2.881 | R 288.10 |
| 1000 - 1900 | R 2.766 | R 276.60 |
| 2000 + | R 2.655 | R 265.50 |
*price indicative
- RS stock no.:
- 182-7055
- Mfr. Part No.:
- DMC2057UVT-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 1.1W | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Width | 1.7 mm | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS, AEC-Q101, MIL-STD-202, J-STD-020, UL 94V-0 | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 1.1W | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Width 1.7 mm | ||
Height 0.9mm | ||
Standards/Approvals RoHS, AEC-Q101, MIL-STD-202, J-STD-020, UL 94V-0 | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Backlighting
DC-DC Converters
Power Management Functions
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