DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 5.2 A, 20 V Enhancement, 6-Pin TSOT DMC2038LVT-7
- RS stock no.:
- 822-2508
- Mfr. Part No.:
- DMC2038LVT-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
R 345,60
(exc. VAT)
R 397,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
Limited stock
- 300 left, ready to ship from another location
- Plus 2,850 left, shipping from 11 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | R 6.912 | R 345.60 |
| 250 - 700 | R 6.74 | R 337.00 |
| 750 - 1450 | R 6.537 | R 326.85 |
| 1500 - 2950 | R 6.276 | R 313.80 |
| 3000 + | R 6.025 | R 301.25 |
*price indicative
- RS stock no.:
- 822-2508
- Mfr. Part No.:
- DMC2038LVT-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 168mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.7nC | |
| Maximum Power Dissipation Pd | 1.1W | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | +150°C | |
| Width | 1.65mm | |
| Height | 900μm | |
| Standards/Approvals | UL 94V-0, J-STD-020, MIL-STD-202, AEC-Q101, RoHS | |
| Length | 2.95mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 168mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.7nC | ||
Maximum Power Dissipation Pd 1.1W | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature +150°C | ||
Width 1.65mm | ||
Height 900μm | ||
Standards/Approvals UL 94V-0, J-STD-020, MIL-STD-202, AEC-Q101, RoHS | ||
Length 2.95mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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