Vishay SiDR220DP Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

R 109 380,00

(exc. VAT)

R 125 790,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +R 36.46R 109,380.00

*price indicative

RS stock no.:
204-7230
Mfr. Part No.:
SIDR220DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

25V

Series

SiDR220DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.58mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

125W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

200nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

5.15 mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 25 V (D-S) MOSFET has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.

100 % Rg and UIS tested

TrenchFET Gen IV power MOSFET

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