Vishay SiR870BDP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiR870BDP-T1-RE3

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Subtotal (1 pack of 10 units)*

R 549,62

(exc. VAT)

R 632,06

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90R 54.962R 549.62
100 - 490R 53.588R 535.88
500 - 990R 51.98R 519.80
1000 - 1490R 49.901R 499.01
1500 +R 47.905R 479.05

*price indicative

Packaging Options:
RS stock no.:
204-7224
Mfr. Part No.:
SiR870BDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiR870BDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

100W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

110nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

1.12 mm

Height

6.25mm

Length

5.26mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has a very low RDS x Qg figure-of-merit (FOM) and is tuned for the lowest RDS x Qoss FOM.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

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