Vishay SiR870BDP Type N-Channel Single MOSFETs, 81 A, 100 V Enhancement, 8-Pin PowerPAK

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Subtotal (1 tape of 1 unit)*

R 37,05

(exc. VAT)

R 42,61

(inc. VAT)

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Per Tape
1 - 9R 37.05
10 - 24R 36.12
25 - 99R 35.04
100 - 499R 33.64
500 +R 32.29

*price indicative

RS stock no.:
653-201
Mfr. Part No.:
SIR870BDP-T1-UE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK

Series

SiR870BDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0061Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Height

0.61mm

Length

6.15mm

Width

5.15 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver low RDS(on), fast switching, and optimized thermal performance.

Pb Free

Halogen free

RoHS compliant

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