Vishay SiDR104ADP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiDR104ADP-T1-RE3

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Subtotal (1 pack of 10 units)*

R 288,07

(exc. VAT)

R 331,28

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90R 28.807R 288.07
100 - 490R 28.087R 280.87
500 - 990R 27.244R 272.44
1000 - 1490R 26.154R 261.54
1500 +R 25.108R 251.08

*price indicative

Packaging Options:
RS stock no.:
204-7220
Mfr. Part No.:
SiDR104ADP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiDR104ADP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Power Dissipation Pd

100W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

5.15 mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has a very low RDS x Qg figure-of-merit (FOM). It is tuned for the lowest RDS x Qoss FOM.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

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