Vishay SiR104LDP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiR104LDP-T1-RE3

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Subtotal (1 pack of 20 units)*

R 371,52

(exc. VAT)

R 427,24

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 80R 18.576R 371.52
100 - 480R 18.111R 362.22
500 - 980R 17.568R 351.36
1000 - 1480R 16.865R 337.30
1500 +R 16.191R 323.82

*price indicative

Packaging Options:
RS stock no.:
204-7222
Mfr. Part No.:
SiR104LDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiR104LDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

110nC

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

1.12 mm

Standards/Approvals

No

Length

5.26mm

Height

6.25mm

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has a very low RDS x Qg figure-of-merit (FOM). It is tuned for the lowest RDS x Qoss FOM.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

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