Vishay SiSHA04DN N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8SH SISHA04DN-T1-GE3
- RS stock no.:
- 188-5123
- Mfr. Part No.:
- SISHA04DN-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 192,35
(exc. VAT)
R 221,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,980 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 19.235 | R 192.35 |
| 50 - 90 | R 18.754 | R 187.54 |
| 100 - 490 | R 18.191 | R 181.91 |
| 500 - 990 | R 17.463 | R 174.63 |
| 1000 + | R 16.764 | R 167.64 |
*price indicative
- RS stock no.:
- 188-5123
- Mfr. Part No.:
- SISHA04DN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8SH | |
| Series | SiSHA04DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00215Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 22.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | -16V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Standards/Approvals | No | |
| Height | 930μm | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8SH | ||
Series SiSHA04DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00215Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 22.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs -16V, +20V | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Standards/Approvals No | ||
Height 930μm | ||
Length 3.3mm | ||
Automotive Standard No | ||
N-Channel 30 V (D-S) MOSFET.
TrenchFET ® Gen IV power MOSFET
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