Vishay SiSHA10DN Type N-Channel MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISHA10DN-T1-GE3

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Subtotal (1 pack of 25 units)*

R 258,475

(exc. VAT)

R 297,25

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 25R 10.339R 258.48
50 - 75R 10.08R 252.00
100 - 475R 9.778R 244.45
500 - 975R 9.387R 234.68
1000 +R 9.011R 225.28

*price indicative

Packaging Options:
RS stock no.:
188-5146
Mfr. Part No.:
SISHA10DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

SiSHA10DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

34nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

39W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.3mm

Height

0.93mm

Width

3.3 mm

Automotive Standard

No

N-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

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