Vishay SiSS05DN Type P-Channel MOSFET, 108 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS05DN-T1-GE3

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Subtotal (1 pack of 10 units)*

R 193,74

(exc. VAT)

R 222,80

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 19.374R 193.74
50 - 90R 18.89R 188.90
100 - 490R 18.323R 183.23
500 - 990R 17.59R 175.90
1000 +R 16.886R 168.86

*price indicative

Packaging Options:
RS stock no.:
188-5013
Mfr. Part No.:
SiSS05DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

108A

Maximum Drain Source Voltage Vds

30V

Series

SiSS05DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

76nC

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

-1.1V

Maximum Power Dissipation Pd

65.7W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Height

0.78mm

Width

3.3 mm

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-38-851

P-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV p-channel power MOSFET

Provides exceptionally low RDS(on) in a compact package that is thermally enhanced

Enables higher power density

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