Vishay SiSS05DN Type P-Channel MOSFET, 108 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS05DN-T1-GE3
- RS stock no.:
- 188-4900
- Mfr. Part No.:
- SiSS05DN-T1-GE3
- Manufacturer:
- Vishay
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- RS stock no.:
- 188-4900
- Mfr. Part No.:
- SiSS05DN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 108A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiSS05DN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65.7W | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Maximum Gate Source Voltage Vgs | -20V, +16V | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Width | 3.3mm | |
| Height | 780μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 108A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiSS05DN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65.7W | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Maximum Gate Source Voltage Vgs -20V, +16V | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Width 3.3mm | ||
Height 780μm | ||
Automotive Standard No | ||
P-Channel 30 V (D-S) MOSFET.
TrenchFET® Gen IV p-channel power MOSFET
Provides exceptionally low RDS(on) in a compact package that is thermally enhanced
Enables higher power density
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