Vishay TrenchFET Type N-Channel Power MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8 SI4900DY-T1-E3

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Subtotal (1 pack of 10 units)*

R 74,50

(exc. VAT)

R 85,70

(inc. VAT)

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Last RS stock
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Units
Per unit
Per Pack*
10 - 40R 7.45R 74.50
50 - 90R 7.264R 72.64
100 - 490R 7.046R 70.46
500 - 990R 6.764R 67.64
1000 +R 6.493R 64.93

*price indicative

Packaging Options:
RS stock no.:
180-8002
Mfr. Part No.:
SI4900DY-T1-E3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

5.3A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.058Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

3.1W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

13nC

Maximum Operating Temperature

150°C

Height

1.35mm

Length

4.8mm

Width

4 mm

Standards/Approvals

IEC 61249-2-21

Automotive Standard

No

The Vishay Siliconix SI4900DY series TrenchFET dual N channel power MOSFET has drain to source voltage of 60 V. It is used in LCD TV and CCFL inverter.

Pb-free

Halogen free

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