Vishay TrenchFET N-Channel Power MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8 SI4900DY-T1-E3
- RS stock no.:
- 180-7298
- Mfr. Part No.:
- SI4900DY-T1-E3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
R 22 295,00
(exc. VAT)
R 25 640,00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 8.918 | R 22,295.00 |
| 5000 + | R 8.695 | R 21,737.50 |
*price indicative
- RS stock no.:
- 180-7298
- Mfr. Part No.:
- SI4900DY-T1-E3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.058Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.1W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Height | 1.35mm | |
| Length | 4.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.058Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.1W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Height 1.35mm | ||
Length 4.8mm | ||
Automotive Standard No | ||
The Vishay Siliconix SI4900DY series TrenchFET dual N channel power MOSFET has drain to source voltage of 60 V. It is used in LCD TV and CCFL inverter.
Pb-free
Halogen free
Related links
- Vishay TrenchFET N-Channel Power MOSFET 60 V Enhancement, 8-Pin SO-8 SI4900DY-T1-E3
- Vishay Dual TrenchFET 2 Type P 5.3 A 8-Pin SO-8 SI4559ADY-T1-E3
- Vishay TrenchFET N-Channel Power MOSFET 60 V Enhancement, 3-Pin SOT-23 SI2308BDS-T1-E3
- Vishay Isolated TrenchFET 2 N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC SI9945BDY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P 5.3 A 8-Pin SOIC SI4559ADY-T1-GE3
- Vishay Isolated N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC SI9945BDY-T1-GE3
- Vishay TrenchFET N-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SI4896DY-T1-E3