Vishay Single SQJ 1 Type P-Channel MOSFET, 36 A, 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3

RS stock no.:: 180-7972
Mfr. Part No.:: SQJ457EP-T1_GE3
Manufacturer:: Vishay

Vishay Single SQJ 1 Type P-Channel MOSFET, 36 A, 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3

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Subtotal (1 pack of 20 units)*

R 222,58

(exc. VAT)

R 255,96

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

2,720 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 80	R 11.129	R 222.58
100 - 480	R 10.851	R 217.02
500 - 980	R 10.526	R 210.52
1000 +	R 10.105	R 202.10

*price indicative

RS stock no.:: 180-7972
Mfr. Part No.:: SQJ457EP-T1_GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	60V
	Package Type	PowerPAK SO-8L
	Series	SQJ
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.025Ω
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	65nC
	Maximum Power Dissipation Pd	68W
	Maximum Gate Source Voltage Vgs	±20 V
	Transistor Configuration	Single
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101
	Length	6.15mm
	Height	1.14mm
	Width	5.13 mm
	Number of Elements per Chip	1
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 60V
	Package Type PowerPAK SO-8L
	Series SQJ
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.025Ω
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 65nC
	Maximum Power Dissipation Pd 68W
	Maximum Gate Source Voltage Vgs ±20 V
	Transistor Configuration Single
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101
	Length 6.15mm
	Height 1.14mm
	Width 5.13 mm
	Number of Elements per Chip 1
	Automotive Standard AEC-Q101

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 6.7mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Applications

• Adaptor switches

• DC/DC primary switches

• Load switches

• Power management

Certifications

• AEC-Q101 qualified

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested