Vishay Single 1 Type P-Channel MOSFET, -11 A, 100 V TO-220FP
- RS stock no.:
- 180-8585
- Mfr. Part No.:
- IRFI9540GPBF
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 391,34
(exc. VAT)
R 450,04
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 12 January 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 78.268 | R 391.34 |
| 10 - 20 | R 76.312 | R 381.56 |
| 25 + | R 74.022 | R 370.11 |
*price indicative
- RS stock no.:
- 180-8585
- Mfr. Part No.:
- IRFI9540GPBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -11A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220FP | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 0.2Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48W | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.8mm | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -11A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220FP | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 0.2Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48W | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Height 4.8mm | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRFI9540G is a P-channel power MOSFET having drain to source(Vds) voltage of -100V.The gate to source voltage(VGS) is 20V. It is having TO-220 FULLPAK package. It offers drain to source resistance (RDS.) 0.2ohms at 10VGS.
Isolated package
High voltage isolation = 2.5 kVrms (t = 60 s; f = 60 Hz)
Sink to lead creepage distance = 4.8 mm
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