Vishay Single Si7129DN 1 Type P, Type P-Channel MOSFET, 35 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

R 22 104,00

(exc. VAT)

R 25 419,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +R 7.368R 22,104.00

*price indicative

RS stock no.:
165-6294
Mfr. Part No.:
SI7129DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type P

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212-8

Series

Si7129DN

Mount Type

Surface, Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

52.1W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

24.6nC

Minimum Operating Temperature

-50°C

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Height

1.07mm

Length

3.15mm

Width

3.15 mm

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor


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