Vishay Single 1 Type P-Channel Power MOSFET, 11 A, 60 V TO-263 IRF9Z24SPBF

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Subtotal (1 tube of 50 units)*

R 937,85

(exc. VAT)

R 1 078,55

(inc. VAT)

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Last RS stock
  • Final 50 unit(s), ready to ship from another location
Units
Per unit
Per Tube*
50 - 50R 18.757R 937.85
100 - 450R 18.288R 914.40
500 - 950R 17.739R 886.95
1000 - 1950R 17.03R 851.50
2000 +R 16.349R 817.45

*price indicative

RS stock no.:
180-8310
Mfr. Part No.:
IRF9Z24SPBF
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

0.28Ω

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19nC

Maximum Power Dissipation Pd

60W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Transistor Configuration

Single

Standards/Approvals

RoHS

Length

2.79mm

Width

10.67 mm

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay IRF9Z24S is a P-channel power MOSFET having drain to source(Vds) voltage of -60V.The gate to source voltage(VGS) is 20V. It is having D2PAK (TO-263) package. It offers drain to source resistance (RDS.) 0.28ohms at 10VGS. Maximum drain current -11A.

Advanced process technology

Surface mount

175 °C operating temperature

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