MPN

Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP SI3585CDV-T1-GE3

RS stock no.:: 180-7911
Mfr. Part No.:: SI3585CDV-T1-GE3
Manufacturer:: Vishay

Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP SI3585CDV-T1-GE3

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Subtotal (1 pack of 20 units)*

R 168,54

(exc. VAT)

R 193,82

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 2,620 unit(s) shipping from 15 September 2026

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Units	Per unit	Per Pack*
20 - 20	R 8.427	R 168.54
40 - 80	R 8.217	R 164.34
100 - 480	R 7.97	R 159.40
500 - 980	R 7.651	R 153.02
1000 +	R 7.345	R 146.90

*price indicative

RS stock no.:: 180-7911
Mfr. Part No.:: SI3585CDV-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N, Type P
	Maximum Continuous Drain Current Id	3.9A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	TSOP
	Mount Type	Surface
	Pin Count	6
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	12V
	Maximum Power Dissipation Pd	1.4W
	Typical Gate Charge Qg @ Vgs	3.2nC
	Minimum Operating Temperature	-55°C
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Height	1mm
	Length	3.05mm
	Width	1.65mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N, Type P
	Maximum Continuous Drain Current Id 3.9A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type TSOP
	Mount Type Surface
	Pin Count 6
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 12V
	Maximum Power Dissipation Pd 1.4W
	Typical Gate Charge Qg @ Vgs 3.2nC
	Minimum Operating Temperature -55°C
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Height 1mm
	Length 3.05mm
	Width 1.65mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V. The MOSFET has a drain-source resistance of 58mohm at a gate-source voltage of 4.5V. It has continuous drain currents of 3.9A and 2.1A. It has a maximum power rating of 1.4W and 1.3W. It has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converters

• Drivers: motor, solenoid, relay

• Load switch for portable devices

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

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