Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 0.5 A, 20 V Enhancement, 6-Pin SC-89 SI1034CX-T1-GE3
- RS stock no.:
- 180-7879
- Mfr. Part No.:
- SI1034CX-T1-GE3
- Manufacturer:
- Vishay
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View bulk pricing optionSubtotal (1 pack of 50 units)*
R 164,80
(exc. VAT)
R 189,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,750 unit(s) shipping from 01 June 2026
- Plus 3,000 unit(s) shipping from 15 January 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 3.296 | R 164.80 |
| 100 - 450 | R 3.213 | R 160.65 |
| 500 - 950 | R 3.117 | R 155.85 |
| 1000 + | R 2.992 | R 149.60 |
*price indicative
- RS stock no.:
- 180-7879
- Mfr. Part No.:
- SI1034CX-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 0.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-89 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.396Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 220mW | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 1.7mm | |
| Height | 0.6mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 0.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-89 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.396Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 220mW | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 1.7mm | ||
Height 0.6mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Vishay MOSFET
The Vishay surface mount dual N-channel MOSFET has a drain-source voltage of 20V. It has drain-source resistance of 396mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 220mW. The MOSFET has continuous drain current of 610mA. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Gate source ESD protected: 1000V
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Battery powered devices
• Drivers: relays, solenoids, lamps, hammers, displays, memories
• Load/power switching for portable devices
• Power supply converter circuits
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
Related links
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