Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3

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Subtotal (1 pack of 25 units)*

R 279,425

(exc. VAT)

R 321,35

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 25R 11.177R 279.43
50 - 75R 10.897R 272.43
100 - 225R 10.57R 264.25
250 - 975R 10.148R 253.70
1000 +R 9.742R 243.55

*price indicative

Packaging Options:
RS stock no.:
228-2835
Mfr. Part No.:
SIA938DJT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

20V

Package Type

SC-70

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

7.8W

Typical Gate Charge Qg @ Vgs

3.5nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Dual N-Channel MOSFET provides exceptional versatility for power management design.

Very low RDS(on) and excellent RDS x Qg

Figure-of-Merit (FOM) in an ultra compact

package footprint

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