Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

R 3 198,00

(exc. VAT)

R 3 678,00

(inc. VAT)

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3000 +R 1.066R 3,198.00

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RS stock no.:
165-6934
Mfr. Part No.:
SI2365EDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.9A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.0675Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-50°C

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

1.7W

Typical Gate Charge Qg @ Vgs

13.8nC

Forward Voltage Vf

-0.8V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

1.02mm

Length

3.04mm

Width

1.4 mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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