Infineon OptiMOS 3 N-Channel MOSFET, 300 A, 100 V Enhancement, 8-Pin HSOF IPT020N10N3ATMA1

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Subtotal (1 reel of 2000 units)*

R 93 500,00

(exc. VAT)

R 107 520,00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +R 46.75R 93,500.00

*price indicative

RS stock no.:
178-7450
Mfr. Part No.:
IPT020N10N3ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 3

Package Type

HSOF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

156nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20V, +20V

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Width

10.1mm

Standards/Approvals

No

Height

2.4mm

Length

10.58mm

Automotive Standard

No

Exempt

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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