Infineon OptiMOS 5 Type N-Channel MOSFET, 300 A, 60 V Enhancement, 8-Pin HSOF IPT007N06NATMA1
- RS stock no.:
- 906-4407
- Mfr. Part No.:
- IPT007N06NATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 211,04
(exc. VAT)
R 242,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 3,338 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 105.52 | R 211.04 |
| 20 - 98 | R 102.88 | R 205.76 |
| 100 - 198 | R 99.795 | R 199.59 |
| 200 - 498 | R 95.805 | R 191.61 |
| 500 + | R 91.975 | R 183.95 |
*price indicative
- RS stock no.:
- 906-4407
- Mfr. Part No.:
- IPT007N06NATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | HSOF | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 216nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.58mm | |
| Standards/Approvals | No | |
| Width | 10.1 mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type HSOF | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 216nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.58mm | ||
Standards/Approvals No | ||
Width 10.1 mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
Exempt
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS™ 5 N-Channel MOSFET 60 V, 8-Pin HSOF-8 IPT007N06NATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 8-Pin HSOF-8 IAUT300N10S5N015ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 8-Pin HSOF-8 IPT015N10N5ATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 100 V, 8-Pin HSOF-8 IPT020N10N3ATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 80 V, 8-Pin HSOF-8 IAUT300N08S5N012ATMA2
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 8-Pin HSOF-8 IPT004N03LATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin HSOF-8 IPT010N08NM5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin HSOF-8 IAUT240N08S5N019ATMA1