Infineon OptiMOS 3 N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF IPT111N20NFDATMA1

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Subtotal (1 pack of 2 units)*

R 279,65

(exc. VAT)

R 321,60

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 139.825R 279.65
10 - 98R 136.33R 272.66
100 - 248R 132.24R 264.48
250 - 498R 126.95R 253.90
500 +R 121.87R 243.74

*price indicative

Packaging Options:
RS stock no.:
214-4424
Mfr. Part No.:
IPT111N20NFDATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

96A

Maximum Drain Source Voltage Vds

200V

Package Type

HSOF

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

65nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Length

10.1mm

Height

2.4mm

Standards/Approvals

No

Width

10.58mm

Automotive Standard

No

This Infineon OptiMOS 3 MOSFET is perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

It is RoHS compliant

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