onsemi Dual 2 Type N-Channel Power MOSFET, 68 A, 60 V Enhancement, 8-Pin DFN NVMFD5C668NLT1G
- RS stock no.:
- 178-4503
- Mfr. Part No.:
- NVMFD5C668NLT1G
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 231,47
(exc. VAT)
R 266,19
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 1,490 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 23.147 | R 231.47 |
| 100 - 240 | R 22.568 | R 225.68 |
| 250 - 490 | R 21.891 | R 218.91 |
| 500 - 990 | R 21.015 | R 210.15 |
| 1000 + | R 20.174 | R 201.74 |
*price indicative
- RS stock no.:
- 178-4503
- Mfr. Part No.:
- NVMFD5C668NLT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.8nC | |
| Maximum Power Dissipation Pd | 57.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 175°C | |
| Forward Voltage Vf | 0.85V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Height | 1.05mm | |
| Width | 6.1 mm | |
| Length | 5.1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.8nC | ||
Maximum Power Dissipation Pd 57.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 175°C | ||
Forward Voltage Vf 0.85V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Height 1.05mm | ||
Width 6.1 mm | ||
Length 5.1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection
PPAP Capable
These Devices are Pb−Free
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