onsemi Dual 2 Type N-Channel Power MOSFET, 25 A, 80 V Enhancement, 8-Pin DFN NVMFD6H852NLT1G

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS stock no.:
195-2561
Mfr. Part No.:
NVMFD6H852NLT1G
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

80V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

31.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3.2W

Minimum Operating Temperature

175°C

Typical Gate Charge Qg @ Vgs

10nC

Transistor Configuration

Dual

Maximum Operating Temperature

-55°C

Standards/Approvals

No

Width

5.1 mm

Height

1.05mm

Length

6.1mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection

PPAP Capable

These Devices are Pb−Free

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