onsemi Dual 2 Type N-Channel Power MOSFET, 25 A, 80 V Enhancement, 8-Pin DFN NVMFD6H852NLWFT1G
- RS stock no.:
- 195-2556
- Mfr. Part No.:
- NVMFD6H852NLWFT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 30 units)*
R 468,27
(exc. VAT)
R 538,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 1,500 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 30 - 270 | R 15.609 | R 468.27 |
| 300 - 720 | R 15.219 | R 456.57 |
| 750 + | R 14.762 | R 442.86 |
*price indicative
- RS stock no.:
- 195-2556
- Mfr. Part No.:
- NVMFD6H852NLWFT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 31.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | 175°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.2W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Height | 1.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 31.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature 175°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.2W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Height 1.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection
PPAP Capable
These Devices are Pb−Free
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