onsemi Dual 2 Type N-Channel Power MOSFET, 74 A, 80 V Enhancement, 8-Pin DFN

Image representative of range

Subtotal (1 reel of 1500 units)*

R 25 357,50

(exc. VAT)

R 29 161,50

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 1,500 unit(s), ready to ship from another location
Units
Per unit
Per Reel*
1500 +R 16.905R 25,357.50

*price indicative

RS stock no.:
195-2668
Mfr. Part No.:
NVMFD6H840NLT1G
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

74A

Maximum Drain Source Voltage Vds

80V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

32nC

Maximum Power Dissipation Pd

3.1W

Forward Voltage Vf

0.8V

Minimum Operating Temperature

175°C

Transistor Configuration

Dual

Maximum Operating Temperature

-55°C

Standards/Approvals

No

Width

5.1 mm

Height

1.05mm

Length

6.1mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)

Compact Design

Low RDS(on)

Minimize Conduction Losses

Low QG and Capacitance

Minimize Driver Losses

NVMFS5C410NLWF − Wettable Flank Option

Enhanced Optical Inspection

PPAP Capable

Application

Reverser Battery protection

Switching power supplies

Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

Related links