Vishay Siliconix TrenchFET Type P-Channel MOSFET, 9.4 A, 200 V Enhancement, 8-Pin SO-8 SQJ431AEP-T1_GE3
- RS stock no.:
- 178-3873
- Mfr. Part No.:
- SQJ431AEP-T1_GE3
- Manufacturer:
- Vishay Siliconix
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 259,01
(exc. VAT)
R 297,86
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 8,090 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 25.901 | R 259.01 |
| 100 - 490 | R 25.253 | R 252.53 |
| 500 - 990 | R 24.495 | R 244.95 |
| 1000 + | R 23.515 | R 235.15 |
*price indicative
- RS stock no.:
- 178-3873
- Mfr. Part No.:
- SQJ431AEP-T1_GE3
- Manufacturer:
- Vishay Siliconix
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 760mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Power Dissipation Pd | 68W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 5.99mm | |
| Height | 1.07mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 760mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Power Dissipation Pd 68W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 5.99mm | ||
Height 1.07mm | ||
Automotive Standard AEC-Q101 | ||
Exempt
- COO (Country of Origin):
- CN
TrenchFET® power MOSFET
Related links
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 200 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SQJ481EP-T1_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJ415EP-T1_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 20 V Enhancement, 6-Pin SC-70
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 30 V Enhancement, 6-Pin SC-70
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 6-Pin SC-70-6L