Vishay Siliconix TrenchFET Type P-Channel MOSFET, 30 A, 40 V Enhancement, 8-Pin SO-8 SQJ415EP-T1_GE3
- RS stock no.:
- 178-3859
- Mfr. Part No.:
- SQJ415EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 375,175
(exc. VAT)
R 431,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 5,975 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | R 15.007 | R 375.18 |
| 100 - 475 | R 14.632 | R 365.80 |
| 500 - 975 | R 14.193 | R 354.83 |
| 1000 + | R 13.625 | R 340.63 |
*price indicative
- RS stock no.:
- 178-3859
- Mfr. Part No.:
- SQJ415EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.07mm | |
| Length | 5.99mm | |
| Width | 5 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Operating Temperature 175°C | ||
Height 1.07mm | ||
Length 5.99mm | ||
Width 5 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Exempt
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 14mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 45W and continuous drain current of 30A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
Related links
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