Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3

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Subtotal (1 reel of 3000 units)*

R 21 192,00

(exc. VAT)

R 24 372,00

(inc. VAT)

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  • Final 3,000 unit(s), ready to ship from another location
Units
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Per Reel*
3000 +R 7.064R 21,192.00

*price indicative

RS stock no.:
178-3702
Mfr. Part No.:
SiZ348DT-T1-GE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAIR 3 x 3

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Power Dissipation Pd

16.7W

Typical Gate Charge Qg @ Vgs

12.1nC

Transistor Configuration

Dual

Maximum Operating Temperature

-55°C

Length

3mm

Height

0.75mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Exempt

TrenchFET® Gen IV power MOSFET

High side and low side MOSFETs form optimized combination for 50 % duty cycle

Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching

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