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Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3

RS stock no.:: 178-3944
Mfr. Part No.:: SiZ350DT-T1-GE3
Manufacturer:: Vishay Siliconix

Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3

Image representative of range

Bulk discount available

Subtotal (1 pack of 10 units)*

R 194,33

(exc. VAT)

R 223,48

(inc. VAT)

FREE delivery for orders over R 1,500.00

Last RS stock

Final 2,770 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
10 - 90	R 19.433	R 194.33
100 - 490	R 18.947	R 189.47
500 - 990	R 18.379	R 183.79
1000 +	R 17.644	R 176.44

*price indicative

RS stock no.:: 178-3944
Mfr. Part No.:: SiZ350DT-T1-GE3
Manufacturer:: Vishay Siliconix

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay Siliconix
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	PowerPAIR 3 x 3
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	16.7W
	Maximum Gate Source Voltage Vgs	16 V
	Typical Gate Charge Qg @ Vgs	12.1nC
	Minimum Operating Temperature	150°C
	Transistor Configuration	Dual
	Maximum Operating Temperature	-55°C
	Length	3mm
	Standards/Approvals	No
	Width	3 mm
	Height	0.75mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay Siliconix
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type PowerPAIR 3 x 3
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 16.7W
	Maximum Gate Source Voltage Vgs 16 V
	Typical Gate Charge Qg @ Vgs 12.1nC
	Minimum Operating Temperature 150°C
	Transistor Configuration Dual
	Maximum Operating Temperature -55°C
	Length 3mm
	Standards/Approvals No
	Width 3 mm
	Height 0.75mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

Exempt

COO (Country of Origin):: TW

TrenchFET® Gen IV power MOSFET

High side and low side MOSFETs form optimized

combination for 50 % duty cycle

Optimized RDS - Qg and RDS - Qgd FOM elevates

efficiency for high frequency switching

APPLICATIONS

Synchronous buck

DC/DC conversion

Half bridge

POL

Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3

FREE delivery for orders over R 1,500.00

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