Vishay Dual TrenchFET 2 N-Channel MOSFET, 32.5 A, 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ254DT-T1-GE3
- RS stock no.:
- 228-2935
- Mfr. Part No.:
- SiZ254DT-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 106,90
(exc. VAT)
R 122,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,090 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 10.69 | R 106.90 |
| 50 - 90 | R 10.423 | R 104.23 |
| 100 - 240 | R 10.11 | R 101.10 |
| 250 - 990 | R 9.706 | R 97.06 |
| 1000 + | R 9.318 | R 93.18 |
*price indicative
- RS stock no.:
- 228-2935
- Mfr. Part No.:
- SiZ254DT-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 32.5A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Package Type | PowerPAIR 3 x 3S | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0161Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 33W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 32.5A | ||
Maximum Drain Source Voltage Vds 70V | ||
Package Type PowerPAIR 3 x 3S | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0161Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 33W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Dual N-Channel 70 V (D-S) MOSFET.
100 % Rg and UIS tested
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