Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3
- RS stock no.:
- 178-3932
- Mfr. Part No.:
- SiZ348DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 139,63
(exc. VAT)
R 160,57
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 3,860 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 13.963 | R 139.63 |
| 100 - 490 | R 13.614 | R 136.14 |
| 500 - 990 | R 13.206 | R 132.06 |
| 1000 + | R 12.678 | R 126.78 |
*price indicative
- RS stock no.:
- 178-3932
- Mfr. Part No.:
- SiZ348DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAIR 3 x 3 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 16.7W | |
| Typical Gate Charge Qg @ Vgs | 12.1nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Width | 3 mm | |
| Length | 3mm | |
| Height | 0.75mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAIR 3 x 3 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 16.7W | ||
Typical Gate Charge Qg @ Vgs 12.1nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Width 3 mm | ||
Length 3mm | ||
Height 0.75mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Exempt
- COO (Country of Origin):
- TW
TrenchFET® Gen IV power MOSFET
High side and low side MOSFETs form optimized combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
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