N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

RS stock no.:: 178-3693
Mfr. Part No.:: SiS110DN-T1-GE3
Manufacturer:: Vishay Siliconix

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

Price (Excl VAT) Each (On a Reel of 3000)

R 4,001

(exc. VAT)

R 4,601

(inc. VAT)

2 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Reel**
3000 +	R 4,001	R 12 003,00

**price indicative

RS stock no.:: 178-3693
Mfr. Part No.:: SiS110DN-T1-GE3
Manufacturer:: Vishay Siliconix

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	14.2 A
Maximum Drain Source Voltage	100 V
Series	TrenchFET
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	4V
Maximum Power Dissipation	24 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	1
Width	3.15mm
Typical Gate Charge @ Vgs	8.5 nC @ 10 V
Length	3.15mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Height	1.07mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

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