N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

RS stock no.:: 178-3962
Mfr. Part No.:: SiS110DN-T1-GE3
Manufacturer:: Vishay Siliconix

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

Bulk discount available

Price (Excl VAT) Each (In a Pack of 25)

R 10,072

(exc. VAT)

R 11,583

(inc. VAT)

2 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Pack**
25 - 75	R 10,072	R 251,80
100 - 475	R 9,82	R 245,50
500 - 975	R 9,526	R 238,15
1000 +	R 9,144	R 228,60

**price indicative

RS stock no.:: 178-3962
Mfr. Part No.:: SiS110DN-T1-GE3
Manufacturer:: Vishay Siliconix

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	14.2 A
Maximum Drain Source Voltage	100 V
Series	TrenchFET
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	4V
Maximum Power Dissipation	24 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Typical Gate Charge @ Vgs	8.5 nC @ 10 V
Number of Elements per Chip	1
Length	3.15mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	3.15mm
Forward Diode Voltage	1.2V
Height	1.07mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

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