Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V Enhancement, 6-Pin SC-70-6L SiA106DJ-T1-GE3

Image representative of range

Currently unavailable
Sorry, we don't know when this will be back in stock.
RS stock no.:
178-3667
Mfr. Part No.:
SiA106DJ-T1-GE3
Manufacturer:
Vishay Siliconix
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay Siliconix

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

60V

Package Type

SC-70-6L

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.0185Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.9nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

19W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Width

1.35mm

Standards/Approvals

No

Length

2.2mm

Height

1mm

Automotive Standard

No

Exempt

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET

Very low RDS - Qg Figure-of-Merit (FOM)

Tuned for the lowest RDS – Qoss

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy