Toshiba TK099V65Z Type N-Channel MOSFET, 30 A, 650 V Enhancement, 5-Pin DFN TK099V65Z,LQ(S
- RS stock no.:
- 206-9730
- Mfr. Part No.:
- TK099V65Z,LQ(S
- Manufacturer:
- Toshiba
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 207,73
(exc. VAT)
R 238,89
(inc. VAT)
Add 16 units to get free delivery
Last RS stock
- Final 960 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 103.865 | R 207.73 |
| 50 - 98 | R 101.27 | R 202.54 |
| 100 - 248 | R 98.23 | R 196.46 |
| 250 - 998 | R 94.30 | R 188.60 |
| 1000 + | R 90.53 | R 181.06 |
*price indicative
- RS stock no.:
- 206-9730
- Mfr. Part No.:
- TK099V65Z,LQ(S
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | DFN | |
| Series | TK099V65Z | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.7V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 8 mm | |
| Height | 0.5mm | |
| Length | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type DFN | ||
Series TK099V65Z | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.7V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 8 mm | ||
Height 0.5mm | ||
Length 8mm | ||
Automotive Standard No | ||
The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.
Low drain-source on-resistance 0.08 ?
Storage temperature -55 to 150°C
Related links
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