Toshiba TK099V65Z Type N-Channel MOSFET, 30 A, 650 V Enhancement, 5-Pin DFN

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Subtotal (1 reel of 2500 units)*

R 212 572,50

(exc. VAT)

R 244 457,50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +R 85.029R 212,572.50

*price indicative

RS stock no.:
206-9729
Mfr. Part No.:
TK099V65Z,LQ(S
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Series

TK099V65Z

Package Type

DFN

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

47nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

230W

Forward Voltage Vf

-1.7V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

8 mm

Length

8mm

Height

0.5mm

Automotive Standard

No

The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.

Low drain-source on-resistance 0.08 ?

Storage temperature -55 to 150°C

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