Vishay TrenchFET Type N-Channel MOSFET, 65 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SI7116BDN-T1-GE3

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Subtotal (1 pack of 10 units)*

R 184,36

(exc. VAT)

R 212,01

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 18.436R 184.36
50 - 90R 17.975R 179.75
100 - 240R 17.436R 174.36
250 - 990R 16.739R 167.39
1000 +R 16.069R 160.69

*price indicative

Packaging Options:
RS stock no.:
228-2825
Mfr. Part No.:
SI7116BDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

62.5W

Typical Gate Charge Qg @ Vgs

31.4nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.75mm

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.

Very low Qg and Qoss reduce power loss and

improve efficiency

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces

switching related power loss

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