N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK Infineon IPD053N08N3GATMA1

RS stock no.:: 171-1937
Mfr. Part No.:: IPD053N08N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK Infineon IPD053N08N3GATMA1

Bulk discount available

Price (Excl VAT) Each (In a Pack of 10)

R 31,144

(exc. VAT)

R 35,816

(inc. VAT)

9680 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Pack**
10 - 40	R 31,144	R 311,44
50 - 90	R 30,365	R 303,65
100 +	R 29,454	R 294,54

**price indicative

RS stock no.:: 171-1937
Mfr. Part No.:: IPD053N08N3GATMA1
Manufacturer:: Infineon

IPD053N08N3 Datasheet

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

Infineon MOSFET

The Infineon TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 5.3mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 90A. It has a maximum gate-source voltage of 20V and drain-source voltage of 80V. It has a maximum power dissipation of 150W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET tackles the most challenging applications giving full flexibility in limited spaces. It is designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Dual sided cooling
• Excellent gate charge x R DS (ON) product (FOM)
• Halogen free
• Lead (Pb) free plating
• Low parasitic inductance
• Low profile (<0, 7mm)
• Operating temperature ranges between -55°C and 175°C
• Optimized technology for DC-DC converters
• Superior thermal resistance
• Very low on resistance

Applications

• AC-DC
• Adapter
• DC-DC
• LED
• Motor control
• PC power
• Server power supplies
• SMPS
• Solar
• Telecommunication

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	90 A
Maximum Drain Source Voltage	80 V
Package Type	TO-252
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	9.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	20 V
Length	6.73mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	52 nC @ 10 V
Number of Elements per Chip	1
Width	7.36mm
Minimum Operating Temperature	-55 °C
Height	2.41mm
Forward Diode Voltage	1.2V