Infineon IPD600N25N3 G Type N-Channel MOSFET, 25 A, 250 V Enhancement, 5-Pin TO-252 IPD600N25N3GATMA1
- RS stock no.:
- 171-1948
- Mfr. Part No.:
- IPD600N25N3GATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 401,58
(exc. VAT)
R 461,82
(inc. VAT)
FREE delivery for orders over R 1,500.00
Stocked by manufacturer
- Ready to ship from 12 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 40.158 | R 401.58 |
| 100 - 190 | R 39.154 | R 391.54 |
| 200 - 390 | R 37.979 | R 379.79 |
| 400 - 590 | R 36.46 | R 364.60 |
| 600 + | R 35.002 | R 350.02 |
*price indicative
- RS stock no.:
- 171-1948
- Mfr. Part No.:
- IPD600N25N3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | IPD600N25N3 G | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 136W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.41mm | |
| Width | 7.47 mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series IPD600N25N3 G | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 136W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 2.41mm | ||
Width 7.47 mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IPD600N25N3 G is 250V OptiMOS products are performance leading Benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
Industries lowest R DS(on)
Lowest Q g and Q gd
Related links
- Infineon IPD600N25N3 G Type N-Channel MOSFET 250 V Enhancement, 5-Pin TO-252
- Infineon IPD25CN10N G Type N-Channel MOSFET 100 V Enhancement, 5-Pin TO-252
- Infineon IPD25CN10N G Type N-Channel MOSFET 100 V Enhancement, 5-Pin TO-252 IPD25CN10NGATMA1
- Infineon IPD200N15N3 G Type N-Channel MOSFET 150 V Enhancement, 5-Pin TO-252
- Infineon IPD053N08N3 G Type N-Channel MOSFET 80 V Enhancement, 5-Pin TO-252
- Infineon IPD200N15N3 G Type N-Channel MOSFET 150 V Enhancement, 5-Pin TO-252 IPD200N15N3GATMA1
- Infineon IPD053N08N3 G Type N-Channel MOSFET 80 V Enhancement, 5-Pin TO-252 IPD053N08N3GATMA1
- Infineon IPD068N10N3 G Type N-Channel MOSFET 100 V Enhancement, 5-Pin TO-252