Infineon OptiMOS Type N-Channel MOSFET, 90 A, 80 V Enhancement, 3-Pin PG-TO252-3

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Subtotal (1 pack of 5 units)*

R 248,80

(exc. VAT)

R 286,10

(inc. VAT)

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  • 265 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 45R 49.76R 248.80
50 - 95R 48.516R 242.58
100 - 245R 47.06R 235.30
250 - 995R 45.178R 225.89
1000 +R 43.37R 216.85

*price indicative

RS stock no.:
273-2784
Mfr. Part No.:
IPD046N08N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

80V

Package Type

PG-TO252-3

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42nC

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS

Automotive Standard

No

The Infineon MOSFET is a N channel 80V MOSFET. It is an ideal for high frequency switching and synchronous rectification. This MOSFET has 175 degree Celsius operating temperature. This MOSFET qualified according to JEDEC1 for target application and halogen free according to IEC61249 2 21.

RoHS compliant

Pb free lead plating

Excellent gate charge

Very low on resistance

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