STMicroelectronics STripFET H7 Type N-Channel MOSFET, 90 A, 80 V Enhancement, 3-Pin TO-220 STP140N8F7
- RS stock no.:
- 791-7810
- Mfr. Part No.:
- STP140N8F7
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 212,55
(exc. VAT)
R 244,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 955 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 42.51 | R 212.55 |
| 50 - 245 | R 41.448 | R 207.24 |
| 250 - 495 | R 40.204 | R 201.02 |
| 500 - 995 | R 38.596 | R 192.98 |
| 1000 + | R 37.052 | R 185.26 |
*price indicative
- RS stock no.:
- 791-7810
- Mfr. Part No.:
- STP140N8F7
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | STripFET H7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 96nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.75mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series STripFET H7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 96nC | ||
Maximum Operating Temperature 175°C | ||
Height 15.75mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
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- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220