Infineon SIPMOS Type N-Channel MOSFET, 1.7 A, 100 V Enhancement, 4-Pin SOT-223

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Subtotal (1 reel of 1000 units)*

R 7 458,00

(exc. VAT)

R 8 577,00

(inc. VAT)

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RS stock no.:
165-7514
Mfr. Part No.:
BSP373NH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.7A

Maximum Drain Source Voltage Vds

100V

Series

SIPMOS

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

300mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.2nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.82V

Maximum Power Dissipation Pd

1.8W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.5 mm

Height

1.6mm

Length

6.5mm

Automotive Standard

AEC-Q101

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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