Infineon SIPMOS Type N-Channel MOSFET, 1.7 A, 100 V Enhancement, 4-Pin SOT-223 BSP373NH6327XTSA1
- RS stock no.:
- 752-8224
- Distrelec Article No.:
- 304-45-302
- Mfr. Part No.:
- BSP373NH6327XTSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 67,56
(exc. VAT)
R 77,695
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 100 unit(s) shipping from 01 June 2026
- Plus 3,535 unit(s) shipping from 08 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 120 | R 13.512 | R 67.56 |
| 125 - 495 | R 13.174 | R 65.87 |
| 500 - 2495 | R 12.778 | R 63.89 |
| 2500 - 4995 | R 12.266 | R 61.33 |
| 5000 + | R 11.776 | R 58.88 |
*price indicative
- RS stock no.:
- 752-8224
- Distrelec Article No.:
- 304-45-302
- Mfr. Part No.:
- BSP373NH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.8W | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.8W | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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