Vishay SiS892ADN Type N-Channel Power MOSFET, 28 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8

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Subtotal (1 reel of 3000 units)*

R 19 098,00

(exc. VAT)

R 21 963,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +R 6.366R 19,098.00

*price indicative

RS stock no.:
165-6981
Mfr. Part No.:
SIS892ADN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

100V

Series

SiS892ADN

Package Type

PowerPAK 1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.033Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Maximum Power Dissipation Pd

52W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

6.1nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

3.4 mm

Length

3.4mm

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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